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GSENSE400BSI

产品描述

Resolution

4.2MP

Pixel size

11μm x 11μm

Optical area

22.5mm x 22.5mm

Shutter type

Rolling shutter

Chroma

Mono

 

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产品详情
Resolution:
4.2 MP
Pixel Size:
11 μm
Resolution:
<5MP
Pixel Size:
>10μm
Shutter Type:
Rolling
FSI or BSI:
BSI
Chroma:
Mono
Max . Frame Rate:
<50fps
Max . Frame Rate:
48 fps
Sensor Description
GSENSE400BSI is a 4.2 Megapixel resolution back-side illuminated scientific CMOS image sensor. Three sensor types are available with different anti-reflective coatings and epi-layer thickness,optimizing the peak QE at different wavelength for various applications: the peak QE is 77% at 275nm (-UV) and 95% at 560nm (-TVISB). Same as its front-side illuminated version –GSENSE400, it features very low dark noise, high sensitivity, and high dynamic range, which makes it well-suited for a large variety of scientific applications, such as spectrometry, biometric, fluorescence, surveillance, industrial inspection, forensic, and astronomy applications.
 
Sensor Specifications

Resolution

2048(H) x 2048(V)

Pixel size

11μm x 11μm

Shutter type

Rolling shutter

Dark current

<0.2e-/s/pix@-50°C

FWC

91ke-

Max. SNR

49dB

Temporal noise

1.6e-

Dynamic range

93dB@HDR

QE

95%@560nm;60%@800nm

Frame rate

48fps

FPN

<2e-

PRNU

<1.5%

Supply voltage

3.3V/1.8V

ADC

12bit

Power consumption

<650mW

Package

115-pin PGA

 

 

 

Ordering Information

 

Product number

Description

GSENSE400BSI-TVISB

Thick epi-layer 560nm spectrum optimized AR-coating
Removable D263T glass lid without AR coating on both sides

GSENSE400BSI-UV-QF

Thin epi-layer 275nm spectrum optimized AR-coating
Un-removable quartz glass lid without AR coating on both sides

GSENSE400BSI-UV

Thin epi-layer 275nm spectrum optimized AR-coating
Removable D263T glass lid without AR coating on both sides


 

 

Documentation

Click HERE for compatible sockets from Andon Electronics
Sensor Description
GSENSE400BSI is a 4.2 Megapixel resolution back-side illuminated scientific CMOS image sensor. Three sensor types are available with different anti-reflective coatings and epi-layer thickness,optimizing the peak QE at different wavelength for various applications: the peak QE is 77% at 275nm (-UV) and 95% at 560nm (-TVISB). Same as its front-side illuminated version –GSENSE400, it features very low dark noise, high sensitivity, and high dynamic range, which makes it well-suited for a large variety of scientific applications, such as spectrometry, biometric, fluorescence, surveillance, industrial inspection, forensic, and astronomy applications.
 
Sensor Specifications

Resolution

2048(H) x 2048(V)

Pixel size

11μm x 11μm

Shutter type

Rolling shutter

Dark current

<0.2e-/s/pix@-50°C

FWC

91ke-

Max. SNR

49dB

Temporal noise

1.6e-

Dynamic range

93dB@HDR

QE

95%@560nm;60%@800nm

Frame rate

48fps

FPN

<2e-

PRNU

<1.5%

Supply voltage

3.3V/1.8V

ADC

12bit

Power consumption

<650mW

Package

115-pin PGA

 

 

 

Ordering Information

 

Product number

Description

GSENSE400BSI-TVISB

Thick epi-layer 560nm spectrum optimized AR-coating
Removable D263T glass lid without AR coating on both sides

GSENSE400BSI-UV-QF

Thin epi-layer 275nm spectrum optimized AR-coating
Un-removable quartz glass lid without AR coating on both sides

GSENSE400BSI-UV

Thin epi-layer 275nm spectrum optimized AR-coating
Removable D263T glass lid without AR coating on both sides


 

 

Documentation

Click HERE for compatible sockets from Andon Electronics