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Publications

Paper and Article Using Gpixel Sensor

●S. Karpov, A. Bajat, A. Christov, M. Prouza: "Evaluation of scientific CMOS sensors for sky survey applications", Instrumentation and Methods for Astrophysics, Sep 2019

●Kazunori Asakura, Kiyoshi Hayashida, Takashi Hanasaka, Tomoki Kawabata,Tomokage Yoneyama, Koki Okazaki, Shuntaro Ide, Hirofumi Noda,Hironori Matsumoto, Hiroshi Tsunemi, Hisamitsu Awaki, Hiroshi Nakajima:"X-ray imaging polarimetry with a 2.5-µm pixel CMOS sensor for visible light at room temperature",  Journal of Astronomical Telescopes, Instruments, and Systems 5(3), 035002 6 June 2019.

●Kiyoshi Hayashida, Tomoki Kawabata, Takashi Hanasaka, Kazunori Asakura, Tomokage Yoneyama, Koki Okazaki, Shuntaro Ide, Hironori Matsumoto, Hiroshi Nakajima, Hisamitsu Awaki, and Hiroshi Tsunemi "Sub-arcsecond imaging with multi-image x-ray interferometer module (MIXIM) for very small satellite ", Proc. SPIE 10699, Space Telescopes and Instrumentation 2018: Ultraviolet to Gamma Ray, 106990U 10 July 2018;

Backside-Illuminated CMOS Image Sensor

●Noriyuki Narukage, Shin-nosuke Ishikawa, Taro Sakao, Xinyang Wang, "High-speed back-illuminated CMOS sensor for photon-counting-type imaging-spectroscopy in the soft X-ray range", Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. Volume 950, 11 January 2020, 162974

●Tetsuo Harada1, Nobukazu Teranishi, Takeo Watanabe, Quan Zhou, Xiao Yang, Jan Bogaerts, and Xinyang Wang: "Energy- and spatial-resolved detection using a backside-illuminated CMOS sensor in the soft X-ray region", 30 July 2019, 2019 The Japan Society of Applied Physics.

●Xinyang Wang, Cheng Ma, Yang Liu, Yang Li, Quan Zhou, ”A 4M, 1.4e noise, 96dB dynamic range, back-side illuminated CMOS image sensor”, IISW 2015

Xinyang Wang, Bram Wolfs, Jan Bogaerts, Guy Meynants, Ali BenMoussa: “A high-dynamic range (HDR) back-side illuminated (BSI) CMOS image sensor for extreme UV detection”, SPIE Electronic Imaging 2012, Jan 2012. California, US

●Guy Meynants, Jan Bogaerts, Xinyang Wang,Guido Vanhorebeek :"Backside illuminated global shutter CMOS image sensors", 2011 International Image Sensor Workshop, 08-10 Jun

Radiation Resistance CMOS Image Sensor

●Xinyang Wang, Cheng Ma, Yang Liu, Yang Li, Quan Zhou, ”A 4M, 1.4e noise, 96dB dynamic range, back-side illuminated CMOS image sensor”, IISW 2015

●BenMoussa, X.Wang et al: “ Irradation Damage Tests on Backside-Illuminated CMOS APS prototypes for Extreme Ultraviolet Imager On-Board Solar Orbiter”, IEEE Transactions on Nuclear Science, Vol.60, No.5, Oct 2013

●Xinyang Wang, Jan Bogaerts, Werner Ogiers, Gerd Beeckman, Guy Meynants et al: "Design and characterization of radiation tolerant CMOS image sensor for space applications", International Symposium on Photoelectronic Detection and Imaging, Proc. SPIE 8194, 81942N (2011), 24-26 May 2011, Beijing, China

●Yue Chen, Jiaming Tan, Xinyang Wang,Adri Mierop and Albert J.P. Theuwissen : “X-Ray Radiation Effect on CMOS Imagers with In-Pixel Buried-Channel Source Follower”, ESSDERC, Sept. 12-16, 2011, Helsinki (Finland)

●Padmakumar R. Rao, Xinyang Wang, Albert J.P. Theuwissen : "Degradation of CMOS image sensors in deep sub-micron technology due to gamma-irradiation", Solid-State Electronics, pp. 1407-1413, vol.52, Sep 2008

●Padmakumar Rao, Xinyang Wang, Adri J. Mierop and Albert J.P. Theuwissen : “Gamma-Ray Irradiation Effects on CMOS Image Sensors in Deep Sub-Micron Technology”, 2007 International Image Sensor Workshop, June 7-10, 2007, Ogunquit (Maine).

●Yue Chen, Jiaming Tan, Xinyang Wang, Adri Mierop, Albert Theuwissen : “In-Pixel Buried-Channel Source Follower in CMOS Image Sensors Exposed to X-ray Radiation”, IEEE Sensors 2010, Nov. 1-4, 2010, Hawaii,

Low Dark Noise,High Sensitivity CMOS Image Sensor

●Yue Chen, Yang Xu, Youngcheol Chae, Adri Mierop, Xinyang Wang, Albert J.P. Theuwissen : “A 0.7 e-rms Temporal Readout Noise CMOS Image Sensor for Low-Light_Level Imaging”, ISSCC, San Francisco, Digest Tech. Papers, Febr. 19-23, 2012, pp. 384-385

High Dynamic Range CMOS Image Sensor

●Cheng Ma, Yang Liu, Yang Li, Quan Zhou, Xinyang Wang, Yuchun Chang, “A 4M Pixel High Dynamic Range, Low Noise CMOS Image Sensor with Low Power Counting ADC”,IEEE Transactions on Electron Devices,Vol. 64, Issue 8,2017: 0018-9383.

●Xinyang Wang, Bram Wolfs, Guy Meynants, Jan Bogaerts, et al :"A 89dB Dynamic Range CMOS Image Sensor with Dual Transfer Gate Pixel", 2011 International Image Sensor Workshop, 08-11 Jun 2011, 23 Jun 2011, Hokkaido, Japan

●Xinyang Wang, Bram Wolfs, Jan Bogaerts, Guy Meynants, Ali BenMoussa: “A high-dynamic range (HDR) back-side illuminated (BSI) CMOS image sensor for extreme UV detection”, SPIE Electronic Imaging 2012 , Jan 2012. California, US

●X. Wang et. al.: "Duale Transfer-Gatter (DTG) in CMOS Pixels steigern den dynamischen Bereich", Photonik, 5 (2011), page 42- 44, 01 Oct 2011

●Quan Zhou, Shuxu Guo, Guotong Du, Yuqi Wang and Yuchun Chang, “High dynamic range photodetecting scheme based on PEPT with a large output swing”, IEEE Transactions on Electron Devices, 59(5), 2012: 1423-1429.

●Cheng Ma, D. San Segundo Bello, C. van Hoof, A. Theuwissen, “High dynamic range hybrid pixel sensor”,Electronic Letters,Vol. 47, Issue 12,p.695, 9th June, 2011.

●Ma Cheng, Liu Yang, Li Jing, Zhou Quan, Chang Yuchun, Wang Xinyang:"A 4MP high-dynamic–range, low-noise CMOS image sensor",Proc. SPIE 9403, Image Sensors and Imaging Systems 2015, 940305

High Speed CMOS Image Sensor

●C. Ma, Y. Guo, Z. Li, G. Xin, H. Yin, Y. Liu, Y. Li, Q. Zhou, J. Bogaerts, X. Wang, "High speed 25M global shutter image sensor with 2.5μm pixel", IISW 2019, June 2019, USA

●Xinyang Wang, Jan Bogaerts, Guido Vanhorebeek, Koen Ruythoren, Bart Ceulemans et al : “A 2.2M CMOS image sensor for high speed machine vision applications", SPIE electronic imaging, Jan 2010, US

●G.Meynants, G.Lepage, J.Bogaerts, G.Vanhorebeek, Xinyang Wang, “Limitations to the frame rate of high speed image sensors", International Image Sensor Workshop 2009, June 26th, 2009, Bergen, Norway

●Cheng Ma, Jing Li, Xinyang Wang, “Readout architectures for high speed CMOS image sensors” ,Proc. SPIE 8908, 89081E-1, 2013.

●Pieter Willems; Guy Meynants; Guido Vanhorebeek; Cheng Ma, “High-speed VGA resolution CMOS image sensor with global shutter”, Proc.SPIE Vol. 8298 Sensors, Cameras, and Systems for Industrial and Scientific Applications XIII, 829802-1, 2012.

●Cheng Ma, Jing Li , Xinyang Wang : “Readout architectures for high speed CMOS image sensor “Proc. SPIE 8908, International Symposium on Photoelectronic Detection and Imaging 2013: Imaging Sensors and Applications, 89081E (August 21, 2013); doi:10.1117/12.2033402

●Jan Bogaerts, Koen Ruythooren, Aleksandar Gvozdenovic, Kevin Van Esbroeck, Xinyang Wang et al :"High speed 36 Gbps 12Mpixel global pipelined shutter CMOS image sensor with CDS", 2011 International Image Sensor Workshop, 08-11 Jun 2011, Hokkaido, Japan

CMOS Image Sensor Structure and Circuit Design

●Yang Liu, Cheng Ma, Quan Zhou, Xinyang Wang:"A New 9T Global Shutter Pixel with CDS Technique",Proc. SPIE 9522, Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics 2014, Part II, 952210 (13 April 2015)

●Cheng Ma, Xinyang Wang, “A low power counting method in ramp ADCs used in CMOS image sensors”, IISW 2013.

●Yue Chen, Xinyang Wang, Adri Mierop, Albert J.P. Theuwissen : “A CMOS Image Sensor With In-Pixel Buried-Channel Source Follower and Optimized row Selector”, IEEE Transac. Electron Devices, Vol. 56, Nov. 2009, pp. 2390-2397

●Yue Chen, Xinyang Wang, Adri J. Mierop, Albert J.P. Theuwissen : “Characterization of In-Pixel Buried-Channel Source Follower with Optimized Row Selector in CMOS Image Sensors”, 2009 International Image Sensor Workshop, June 26-28, 2009, Bergen

●Xinyang Wang, Martijn F. Snoeij, Padmakumar R. Rao, Adri Mierop and Albert J.P. Theuwissen : “A CMOS Image Sensor with a Buried-Channel Source Follower”, ISSCC, San Francisco, Digest Tech. Papers, p.62-63, Febr. 3-7, 2008

●Padmakumar R. Rao, Xinyang Wang, Albert J.P. Theuwissen: "CCD Structures Implemented in Standard 0.18-micrometer CMOS technology", Electronic Letters, Vol. 44, No, 8, April 2008

●Ning Xie, Albert J.P. Theuwissen, Xinyang Wang, Johan Leijtens, Henk Hakkesteegt et al: "A CMOS image sensor with row and column profiling means", IEEE Sensors, Oct 2008, Italy

●Xinyang Wang, Padmakumar R. Rao, Adri Mierop, Albert J.P. Theuwissen : “Random Telegraph Signal in CMOS Image Sensor Pixels”, Technical Digest IEDM, San Francisco, pp. 115-118, 2006.

●Quan Zhou, Shuxu Guo, Zhaohan Li, Jingyi Song and Yuchun Chang, “Analysis of responsivity and signal to noise ratio in PEPT”, Chinese Physics Letters, 29(11), 2012: 114203.

●Quan Zhou, Shuxu Guo, Qiang Li, Zhaohan Li, Jingyi Song and Yuchun Chang, “A fully on-chip LDO regulator with a novel PSRR boosting circuit”, 11th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT-2012, 2012: 39-41.

●Quan Zhou, Shuxu Guo, Jingyi Song, Zhaohan Li, Guotong Du and Yuchun Chang, “A Low Power Discrete Operation Mode for Punchthrough Phototransistor”, Journal of Semiconductors, 2013.